20 w hmic silicon pin diode terminated spdt switch 8.0 - 10.5 ghz rev. v2 masw - 010647 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 features ? low insertion loss ? high isolation ? low parasitic capacitance and inductance ? fully monolithic die, integrated bias network ? glass encapsulated construction ? greater than 20 w cw power handling @ +85c ? silicon nitride passivation ? polymer scratch protection ? rohs* compliant description the masw - 010647 is a monolithic, terminated silicon pin diode spdt switch designed for x - band high power, high performance applications. the switch handles greater than 20 w of cw power over the 8.0 - 10.5 ghz frequency band. the device is fabricated using macoms patented hmic process, which allows for the integration of silicon pedestals that embed series and shunt diodes in low loss, low dispersion glass. the switch offers low insertion loss of 0.8 db as well as high isolation performance of 37 db. the device integrates a bias network to allow for simplified bias application and switch control. the topside is fully encapsulated with silicon nitride passivation and an additional polymer layer for scratch and impact protection. these protective coatings prevent damage to the semiconductor junctions and metal air bridges during handling and assembly. pin configuration 2 pin function j1 rf common j2 rf out j3 rf out b2 bias of j2 b3 bias of j3 * restrictions on hazardous substances, european union directive 2011/65/eu. ordering information 1 part number package masw - 010647 - 13950g die in gel pack masw - 010647 - 13950w die in waffle pack 1. die quantity varies. functional diagram 2. the exposed metallization on the chip bottom must be connected to rf, dc and thermal ground. b 3 b 2 l l c c c c c c s w 1 s w 2 j 1 j 2 j 3 r t e r m 2 ( 5 0 ) r t e r m 1 ( 5 0 )
20 w hmic silicon pin diode terminated spdt switch 8.0 - 10.5 ghz rev. v2 masw - 010647 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 parameter test conditions units min. typ. max. insertion loss ( - 5 v 3 / 0 ma bias) 8.0 ghz 8.5 ghz 9.5 ghz 10.5 ghz db 0.70 0.70 0.75 0.85 0.9 1.0 1.1 input to output isolation (+5 v / 55 ma bias) 8.0 ghz 8.5 ghz 9.5 ghz 10.5 ghz db 32 34 35 33 35 37 39 input return loss 8.0 ghz 8.5 ghz 9.5 ghz 10.5 ghz db 19 17 13 25 28 24 18 return loss (termination) (+5 v / 55 ma bias) 8.0 ghz 8.5 ghz 9.5 ghz 10.5 ghz db 12 12 14 18 31 14 input ip3 10 ghz, +20 dbm, 10 & 100 mhz spacing dbm >60 switching speed 4 10 ghz, +/ - 4 v, pw 500 ns, 50% duty cycle ns 130 electrical specifications: t a = + 25 c, z 0 = 50 ?, p in = 0 dbm (unless otherwise noted) 3. r. caverly and g. hiller, establishing the minimum reverse bias for a p - i - n diode in a high power switch, ieee transactions on microwave theory and techniques, vol.38, no.12, december 1990 4. typical switching speed measured from 10% to 90 % of detected rf signal driven by ttl compatible drivers. macom recommends t he madr - 007097, complementary channel ttl pin diode driver. dc control voltages (dc currents) condition of rf output b2 b3 j1 - j2 j1 - j3 - 5 v 3 (0 ma) +5 v (55 ma typ.) low loss isolation +5 v (55 ma typ.) - 5 v 3 (0 ma) isolation low loss driver connections bias control 3 optimal operation is achieved by simultaneous application of negative dc voltage to the low loss switch path and positive dc voltage to the isolating switch path. in the low loss path, the diodes are reverse biased. in the isolating path, the diodes are forward biased. minimum reverse bias required: at x - band, with a 1:1 match, 5 v of reverse bias is required. with a 4:1 match, 10 v of reverse bias is required. however macom recommends 30 v of reverse bias to achieve optimal operating conditions.
20 w hmic silicon pin diode terminated spdt switch 8.0 - 10.5 ghz rev. v2 masw - 010647 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 absolute maximum ratings 5,6 parameter absolute maximum applied reverse voltage 100 v bias current 100 ma @ +85c rf cw incident power (transmission) 20 w @ +85c rf cw incident power (termination) 2 w @ +85c junction temperature +175c operating temperature - 40c to +85c storage temperature - 65c to +150c 5. exceeding any one or combination of these limits may cause permanent damage to this device. 6. macom does not recommend sustained operation near these survivability limits. handling procedures please observe the following precautions to avoid damage: static sensitivity gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these hbm class 1a devices. functional schematic t e r m b 3 j 3 j 1 b 2 j 2 t e r m
20 w hmic silicon pin diode terminated spdt switch 8.0 - 10.5 ghz rev. v2 masw - 010647 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 typical performance: t a = + 25 c isolation vs. frequency, +5v insertion loss vs. frequency, - 5v input return loss vs. frequency transmission, +/ - 5v output return loss vs. frequency termination, +5v -40 -30 -20 -10 0 7 8 9 10 11 12 frequency (ghz) -2.0 -1.5 -1.0 -0.5 0.0 7 8 9 10 11 12 frequency (ghz) -50 -40 -30 -20 -10 7 8 9 10 11 12 frequency (ghz) -40 -30 -20 -10 0 7 8 9 10 11 12 frequency (ghz)
20 w hmic silicon pin diode terminated spdt switch 8.0 - 10.5 ghz rev. v2 masw - 010647 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 5 all dimensions shown in microns (m). thickness is 125 + 10 m. 7. most switches will not have the alignment marks pictured above. switches with alignment marks have the same quality and reli abi lity rating as switches without the alignment marks and cannot be returned as defective. alignment marks 7 outline drawing insertion loss vs. bias voltage 9.5 ghz, 43 dbm cw insertion loss vs. cw power 9.5 ghz, - 30 v typical measured large signal performance -1.4 -1.2 -1.0 -0.8 -0.6 0 5 10 15 20 25 30 +25c +85c bias voltage (v) -1.0 -0.9 -0.8 -0.6 -0.5 35 36 37 38 39 40 41 42 43 44 +25c +85c input power (dbm)
20 w hmic silicon pin diode terminated spdt switch 8.0 - 10.5 ghz rev. v2 masw - 010647 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 6 m/a - com technology solutions inc. all rights reserved. information in this document is provided in connection with m/a - com technology solutions inc ("macom") products. these materials are provided by macom as a service to its customers and may be used for informational purposes only. except as provided in macom's terms and conditions of sale for such products or in any separate agreement related to this document, macom assumes no liability whatsoever. macom assumes no responsibility for errors or omissions in these materials. macom may make changes to specifications and product descriptions at any time, without notice. macom makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" without warranty of any kind, either express or implied, relating to sale and/or use of macom products including liability or warranties relating to fitness for a particular purpose, consequential or incidental damages, merchantability, or infringement of any patent, copyright or other intellectual property right. macom further does not warrant the accuracy or completeness of the information, text, graphics or other items contained within these materials. macom shall not be liable for any special, indirect, incidental, or consequential damages, including without limitation, lost revenues or lost profits, which may result from the use of these materials. macom products are not intended for use in medical, lifesaving or life sustaining applications. macom customers using or selling macom products for use in such applications do so at their own risk and agree to fully indemnify macom for any damages resulting from such improper use or sale.
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